MIM Electrical Source of Ultrathin Dielectric Film
نویسندگان
چکیده
منابع مشابه
The Study of Electrical Properties for Multilayer La2O3/Al2O3 Dielectric Stacks and LaAlO3 Dielectric Film Deposited by ALD
The capacitance and leakage current properties of multilayer La2O3/Al2O3 dielectric stacks and LaAlO3 dielectric film are investigated in this paper. A clear promotion of capacitance properties is observed for multilayer La2O3/Al2O3 stacks after post-deposition annealing (PDA) at 800 °C compared with PDA at 600 °C, which indicated the recombination of defects and dangling bonds performs better ...
متن کاملCharacterization upon electrical hysteresis and thermal diffusion of TiAl3Ox dielectric film
In this paper, we have investigated the electrical properties of TiAl3Ox film as electrical gate insulator deposited by pulsed laser deposition and presented a simple method to describe the thermal diffusion behaviors of metal atoms at TiAl3Ox/Si interfacial region in detail. The TiAl3Ox films show obvious electrical hysteresis by the capacitance-voltage measurements after post-annealing treatm...
متن کاملElectrical actuation of dielectric droplets
Electrical actuation of liquid droplets at the microscale offers promising applications in the fields of microfluidics and lab-on-a-chip devices. Much prior research has targeted the electrical actuation of electrically conducting liquid droplets; however, the actuation of dielectric droplets has remained relatively unexplored, despite the advantages associated with the use of a dielectric drop...
متن کاملThickness Dependent Dielectric Strength of a Low-permittivity Dielectric Film
The dielectric strength of a promising interlevel low relative permittivity dielectric is investigated for various film thicknesses and temperatures by using I-V measurements with metalinsulator-semiconductor (MIS) structures. It is found that the dielectric breakdown mechanism also depends on thickness. For relatively thick films (thickness >500 nm), the dielectric breakdown is electromechanic...
متن کاملQuantum size effect on dielectric function of ultrathin metal film: a first-principles study of Al(1 1 1).
Using first-principles calculations, we show manifestations of the quantum size effect in the dielectric function ε(2) of free-standing Al(1 1 1) ultrathin films of 1 monolayer to 20 monolayers, taking into account size dependent contributions from both interband and intraband electronic transitions. Overall the in-plane components (interband transition) of ε(2) increase with film thickness at ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEJ Transactions on Fundamentals and Materials
سال: 1998
ISSN: 0385-4205,1347-5533
DOI: 10.1541/ieejfms1990.118.9_1049